PT086N4 photo transistor 2.electrical & optical characteristics (ta=25 ) symbol min typ max unit icel 3.0 ma iceo 100 na vce(sat) 0.2 v 400 1100 nm p 880 nm tr 10.0 s n4 n4 tf 10.0 s 12 deg features ? high reliability dimensions (unit:mm) applications ? optical switches pt086n ? pt086n ? ? optical sensors ? edge sensing ? smoke detectors 1. absolute maximum ratings (ta=25 ) symbol unit vceo v vcbo v vebo v veco v ic ma pc mw topr tstg tj tls *time 5 sec max,position:up to 3mm from the body spectral sensitivity rl=100 ,vce=5v,ic=0.5ma peak sensitivity wave length switching time (rise time) i t e m collector emitter current collector dark current c-e saturation voltage conditions vce=20v,ee=0.5mw/cm 2 vce=20v,ee=0mw/cm 2 ic=0.2ma,ee=5mw/cm 2 collector-base voltage emitter-base voltage emitter-collector voltage rl=100 ,vce=5v,ic=0.5ma color temperature=2870k standard tungsten lump switching time (fall time) angular response 30 5 5 junction temp. 125 lead soldering temp.* 260 collector current 50 collector power dissipation 250 i t e m ratings collector-emitter voltage 30 operating temp. -30 to 100 storage temp. -40 to 125 relative response vs 0 20 40 60 80 100 120 400 500 600 700 800 900 1000 1100 1200 wavelength(nm) relative response(%) angular displacement 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 angular displacement (deg.) relative c0llector current(%) icel vs vce 0 2 4 6 8 10 12 14 0 5 10 15 20 vce (v) collector current (ma) 0.5mw/cm 2 1.0mw/cm 2 1.5mw/cm 2 2.0mw/cm 2 icel vs irradiance 0 2 4 6 8 10 12 14 0 0.5 1 1.5 2 2.5 3 irradiance(mw/cm2) collector current (ma) thermal derating curve 0 50 100 150 200 250 300 -40 -20 0 20 40 60 80 100 120 ambient temperature() collector power dissipation (mw) to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
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